Kioxia and Sandisk announced an innovative high-performance 3D QLC flash memory technology designed specifically to handle the growing demands of artificial intelligence (AI) and data-intensive processing applications. This 9th generation architecture combines advanced CMOS technology with an already consolidated memory array platform, aiming to keep up with the fast pace of AI and ensure NAND scalability with more efficient capital management.
Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation, and Sandisk Corporation have unveiled 9th generation 2Tb QLC 3D flash memory technology designed to meet the demanding needs of AI-driven infrastructure. This innovation demonstrates how architectural advancements can boost storage to match the speed of AI workloads while facilitating a more cost-effective manufacturing process.
The new technology benefits from the two companies’ CMOS Bonded to Array (CBA) architecture, which integrates a cutting-edge CMOS wafer with a proven performance memory array. With the addition of important innovations in design and devices, the solution delivers significant performance improvements and allows the agile implementation of advanced storage systems for cloud-based and data-intensive applications. Compared to the previous generation, the 8th generation 2Tb QLC, the new version offers greater bandwidth for writing and reading due to its 6-plane architecture, as well as superior energy efficiency in operations. The NAND interface speed reaches 4.8 Gb/s, representing a 33% increase over previous devices.
Hideshi Miyajima, chief technology officer at Kioxia, said that as AI continues to transform society, its applications are extending from generative artificial intelligence to agent-based AI and physical AI, resulting in an increasingly varied and sophisticated use of data. He explained that by combining its proven memory cell technology with the latest advances in CMOS, Kioxia is accelerating the development of its 9th generation flash memory, a strategy that allows it to deliver high performance with controlled investment costs.
According to Alper Ilkbahar, chief technology officer at Sandisk, the rapid expansion of AI is driving the evolution of storage interfaces, creating a demand for memory technologies that need to advance more quickly than in previous technology cycles. He said 9th generation QLC technology illustrates CBA’s unique adaptability, which allows it to accelerate innovation through independent development of CMOS and memory technologies, resulting in new features brought to market with exceptional capital efficiency.
The arrival of 9th generation QLC 3D flash memory technology represents a crucial milestone in the development of 3D flash memory and underscores the ongoing partnership between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, companies are opening up new possibilities for NAND innovation and helping customers meet growing storage needs in the age of AI.
CBA technology describes a process where each CMOS wafer and cell array wafer are manufactured separately in their ideal conditions and then joined together.
The measurement of 1 Gb/s is calculated as 1,000,000,000 bits/second. It is important to note that this value was obtained in a company-specific test environment and may vary depending on usage conditions.
Product density is based on the density of memory chips present in the product, not the memory capacity actually available to the end user to store data. Usable capacity will be lower due to additional data areas, formatting, bad blocks, and other restrictions. Additionally, this capability may change depending on the host device and application.
